These characteristics are useful for analog applications such as phase and frequency switching with bias selectivity. (19−22) While ambipolar behavior of WSe 2 provides both electron and hole branches in transistor transfer characteristics, (21) the opposite of ambipolar transport is also possible in principle where electron and hole transport can be blocked to achieve anti-ambipolar behavior. Tungsten diselenide (WSe 2), a transition metal dichalcogenide (TMD), is particularly interesting due to its near-silicon bandgap in bulk, ambipolar transport with high hole and electron mobilities, high optical absorption, spin-polarized valleys, and ease of electrostatic control for device operation. One such promising property of certain semiconducting 2DLMs is their ambipolar behavior that allows controllable electron as well as hole transport in the same transistor. Generic device architecture and operation makes this work adaptable to any ambipolar material amenable to electrostatic control. A dual-metal contact transistor with improved linearity for harmonic and excess power suppression demonstrates further performance enhancement. Evaluation of all possible schemes for their power consumption, error probability, and implementation complexity highlights the importance of switching between ambipolar and anti-ambipolar modes of transport for best transmission performance. The output waveforms were used to generate phase-, frequency-, and amplitude-modulated analog schemes for 2- and 3-bit data transmission. This enables the realization of in-phase, out-of-phase, and double-frequency sinusoidal output signals under dark and illumination conditions. This work demonstrates electrostatically reconfigurable and tunable ambipolar and anti-ambipolar transport in the same field-effect transistor using a photoactive ambipolar WSe 2 channel with gate-controlled channel and Schottky barriers. However, the availability of only one transport mode severely limits the application scope and range. Various analog applications, such as phase switching, have been demonstrated using either ambipolar or anti-ambipolar transport in two-dimensional materials.
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